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| 2SD669, 2SD669A Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB649/A Outline 2SD669, 2SD669A Absolute Maximum Ratings (Ta = 25C) Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction temperature Storage temperature Note: 1. Value at TC = 25C. Tj Tstg 1 2SD669 180 120 5 1.5 3 1 20 150 -55 to +150 2SD669A 180 160 5 1.5 3 1 20 150 -55 to +150 Unit V V V A A W W C C 2 2SD669, 2SD669A Electrical Characteristics (Ta = 25C) 2SD669 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO 1 2SD669A Max -- -- -- 10 320 -- 1 1.5 -- -- Min 180 160 5 -- 60 30 -- -- -- -- Typ -- -- -- -- -- -- -- -- 140 14 Max -- -- -- 10 200 -- 1 1.5 -- -- V V MHz pF Unit V V V A Test conditions I C = 1 mA, IE = 0 I C = 10 mA, RBE = I E = 1 mA, IC = 0 VCB = 160 V, IE = 0 VCE = 5 V, IC = 150 mA*2 VCE = 5 V, IC = 500 mA*2 I C = 500 mA, I B = 50 mA*2 VCE = 5 V, IC = 150 mA*2 VCE = 5 V, IC = 150 mA*2 VCB = 10 V, IE = 0, f = 1 MHz Min 180 120 5 -- 60 30 -- -- -- -- Typ -- -- -- -- -- -- -- -- 140 14 DC current transfer ratio hFE1* hFE2 Collector to emitter saturation voltage VCE(sat) Base to emitter voltage VBE Gain bandwidth product f T Collector output capacitance Cob Notes: 1. The 2SD669 and 2SD669A are grouped by h FE1 as follows. 2. Pulse test. B 2SD669 2SD669A 60 to 120 60 to 120 C 100 to 200 100 to 200 D 160 to 320 -- 3 2SD669, 2SD669A 4 2SD669, 2SD669A 5 2SD669, 2SD669A 6 2SD669, 2SD669A When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 7 |
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